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中国电机工程学报 2008, 28(12) 101-106 DOI:
ISSN: 0258-8013 CN: 11-2107/TM |
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| 电力电子与电力传动 |
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高频正弦波电流下IGBT能带结构和开关特性分析 |
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孙孝峰 金晓毅 邬伟扬 吴俊娟 |
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燕山大学电气工程学院 燕山大学电气工程学院 燕山大学电气工程学院 燕山大学电气工程学院 |
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摘要：
基于能带理论--载流子浓度分布与电极距离函数的宏观体现，该文提出了一种IGBT在高频正弦波电流及零电流开关条件下开关动态特性的分析方法。首先介绍了功率器件在实际电路中的工作条件，其次提出了IGBT的能带结构图，并通过对独立元件、稳态及暂态时的能带图的分析比较，得出开关动态特性，并给出开关时刻的电压电流初值及能带图；实验结果也验证了IGBT在高频正弦波电流下零电流开关的开关特性；根据这个特性，文章采用随谐振电流大小微调开关频率的方法，来实现功率管电压过冲的完全抑制。 |
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关键词：
能带理论
零电流开关
开关动态特性
功率半导体器件
电压过冲
串联谐振
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Analysis of Energy-band Structure and Switching Characteristics of IGBT Under High Frequency Sinusoidal Current |
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SUN Xiao-feng Jin Xiao-Yi WU Wei-yang WU Jun-juan |
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Abstract:
Based on the energy-band which is the macroscopical embodiment of the function between carrier concentration distribution and distance from electrode, the paper presents a methodology to analyze the switching dynamic characteristics of IGBTs under high frequency sinusoidal current and zero-current switching (ZCS) conditions. Firstly, the switching principle of devices which were used in a practical application was given. Then, by analyzing and comparing the energy-band diagrams of IGBTs under the individual state, steady-state and transient-state respectively, there has a common variation tendency during the switching period. Experimental results also validate the switching characteristic of IGBT under ZCS. As a result, this characteristic is used to suppress the switching voltage overshot by changing switching frequency along with the resonant current variety for the power semiconductor devices. |
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Keywords:
energy-band theory
zero-voltage-transition
switching dynamic characteristics
power semiconductor devices
voltage overshot
series-resonant
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收稿日期 2006-10-09 修回日期 1900-01-01 网络版发布日期 |
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DOI: |
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基金项目:
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通讯作者: 金晓毅 |
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作者简介: |
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作者Email: jinyi_3@tom.com |
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| Copyright by 中国电机工程学报 |
